Title :
0.4 W CW diffraction limited beam Al free 0.98 μm wavelength three core ARROW-type diode lasers
Author :
Bhattacharya, A. ; Mawst, L.J. ; Nesnidal, M.P. ; Lopez, J. ; Botez, D.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
fDate :
3/28/1996 12:00:00 AM
Abstract :
Diffraction limited beam operation to 0.4 W CW output power has been achieved from 20 μm aperture, 0.98 μm emitting three core antiresonant reflecting optical waveguide (ARROW)-type InGaAs-InGaAsP-InGaP diode lasers. The central lobe energy content is 73% to 0.2 W and 60% at 0.4 W
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; waveguide lasers; 0.2 to 0.4 W; 0.98 micron; ARROW-type diode lasers; Al free material system; CW output power; InGaAs-InGaAsP-InGaP; antiresonant reflecting optical waveguide; diffraction limited beam operation; three core configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960456
