DocumentCode
861549
Title
Effect of Zn on the electro-optical characteristics of metalorganic chemical vapour deposition grown 1.3 μm InGaAsP/InP lasers
Author
Swaminathan, Viswanathan ; Reynolds, C.L. ; Geva, Moti
Author_Institution
Solid State Technol. Center, AT&T Bell Labs., Breinigsville, PA
Volume
32
Issue
7
fYear
1996
fDate
3/28/1996 12:00:00 AM
Firstpage
661
Lastpage
662
Abstract
The diffusion behaviour of Zn during MOCVD of InGaAsP/InP capped mesa buried heterostructure lasers has been reported to exhibit a threshold concentration for significant diffusion, which can result in Zn in the active region. The authors report on the electro-optical characteristics of these lasers and show the effect of Zn in the active region on the threshold current and differential quantum efficiency
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; self-diffusion; semiconductor doping; semiconductor lasers; surface diffusion; vapour phase epitaxial growth; zinc; 1.3 micron; InGaAsP:Zn-InP:Zn; MOCVD; Zn p-type dopant; active region; differential quantum efficiency; diffusion behaviour; electro-optical characteristics; metalorganic CVD; metalorganic chemical vapour deposition; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960423
Filename
491885
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