• DocumentCode
    861559
  • Title

    Four-State Magnetoresistance in Epitaxial CoFe-Based Magnetic Tunnel Junctions

  • Author

    Uemura, Tetsuya ; Marukame, Takao ; Matsuda, Ken-ichi ; Yamamoto, Masafumi

  • Author_Institution
    Div. of Electron. for Informatics, Hokkaido Univ., Sapporo
  • Volume
    43
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    2791
  • Lastpage
    2793
  • Abstract
    A four-state magnetic random access memory (MRAM) was developed using an epitaxial Co50Fe50-MgO-Co50Fe 50 magnetic tunnel junction (MTJ) with a tunnel magnetoresistance (TMR) ratio of 145% at room temperature (RT). Four remanent magnetization states in the single-crystalline Co50Fe50 electrode, due to the cubic anisotropy with easy axes of the lang110rang directions, result in four possible angular-dependent TMRs, each separated by more than 20% at RT. Analysis of the asteroid curve for Co50Fe50 indicated that the magnetic field along 22.5deg from the lang110rang directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells
  • Keywords
    cobalt alloys; electrodes; ferromagnetic materials; iron alloys; magnesium compounds; magnetic anisotropy; magnetic epitaxial layers; magnetic multilayers; magnetic storage; random-access storage; remanence; tunnelling magnetoresistance; 293 to 298 K; Co50Fe50-MgO-Co50Fe50; MRAM; angular-dependent TMR; asteroid curve; cubic anisotropy easy axes; epitaxial CoFe-based magnetic tunnel junctions; four-state magnetic random access memory; four-state magnetoresistance; magnetization direction; remanent magnetization states; single-crystalline electrode; tunnel magnetoresistance ratio; Electrodes; Iron; Magnetic anisotropy; Magnetic separation; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Random access memory; Temperature; Tunneling magnetoresistance; CoFe; magnetic tunnel junction (MTJ); magnetoresistance (MR); multistate magnetic random access memory (MRAM);
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2007.893415
  • Filename
    4202953