DocumentCode :
861561
Title :
Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
Author :
Thedrez, B. ; Lourtioz, J.-M. ; Bouchoule, S. ; Kazmierski, C.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Volume :
32
Issue :
7
fYear :
1996
fDate :
3/28/1996 12:00:00 AM
Firstpage :
662
Lastpage :
664
Abstract :
The authors show that the use of a small absorber section with DC voltage control can improve the spectral tunability of gain-switched quantum well InGaAsP lasers. Using a self-seeding configuration, singlemode picosecond pulses are produced over a spectral range of 50 nm, at a repetition rate of several gigahertz and a constant average output power of several milliwatts. The spectral evolutions of gain and absorption with bias conditions are deduced from net gain measurements under threshold. The extension of tunability to short wavelengths is correlated with the absorption red shift caused by the quantum confined Stark effect at negative voltages. Results are applicable to the design of two section gain-switched distributed feedback lasers capable of operating far from gain maximum
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser tuning; quantum confined Stark effect; quantum well lasers; DC voltage control; DFB lasers; InGaAsP; bias conditions; distributed feedback lasers; gain-switched laser; intracavity absorber; quantum confined Stark effect; quantum well lasers; self-seeding configuration; singlemode picosecond pulses; spectral tunability;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960428
Filename :
491886
Link To Document :
بازگشت