Title :
Low threshold current 780 nm AlGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011¯], fabricated using single-step MOCVD
Author :
Narui, H. ; Imanishi, D.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
3/28/1996 12:00:00 AM
Abstract :
Buried heterostructure (BH) AlGaAs lasers were fabricated using single-step metal organic chemical vapour deposition (MOCVD) on a ridged GaAs substrate aligned to the [011¯] direction. A low threshold current of 8 mA was obtained and the characteristic temperature was 182.1 K. The lasing wavelength was ~780 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; optical fabrication; semiconductor lasers; vapour phase epitaxial growth; 780 nm; 8 mA; AlGaAs; GaAs; buried heterostructure lasers; chemical vapour deposition; low threshold current; metal organic CVD; ridged GaAs substrate; single-step MOCVD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960424
