Title :
Self-pulsating 630 nm band strain-compensated MQW AlGaInP laser diodes
Author :
Bessho, Y. ; Uetani, T. ; Hiroyama, R. ; Komeda, K. ; Shono, M. ; Ibaraki, A. ; Yodoshi, K. ; Niina, T.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
3/28/1996 12:00:00 AM
Abstract :
Self-pulsating 630 nm band AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully developed. A low threshold current of 48 mA was achieved, and relative intensity noise (RIN) was <7×10-14 Hz-1. These lasers have operated for more than 1000 h under 5 mW at 60°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; 1000 hr; 48 mA; 5 mW; 60 C; 630 nm; AlGaInP; laser diodes; low threshold current; relative intensity noise; self-pulsating LD; strain-compensated MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960457
