Title :
Fabrication of field effect devices based on YBaCuO/PrBaCuO/YBaCuO junctions
Author :
Kimura, H. ; Okabe, Y. ; Kamijo, H.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2 V (E=7/spl times/10/sup 4/ V/cm) was applied, the drain-source resistance decreased above the temperature of 100 K. However, the electric field effect could not be observed below the temperature of 100 K. Above the temperature of 100 K, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level=26.5 meV).<>
Keywords :
barium compounds; field effect devices; high-temperature superconductors; praseodymium compounds; superconducting junction devices; yttrium compounds; 100 K; 2 V; YBaCuO-PrBaCuO-YBaCuO; YBaCuO/PrBaCuO/YBaCuO junctions; acceptor level; doped semiconductor; drain-source resistance; electric field; fabrication; field effect devices; three terminal device; Argon; Electrodes; Fabrication; Insulation; Semiconductor films; Sputtering; Substrates; Temperature; Voltage; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
