مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

861630

Title :

Secondary breakdown in transistors

Author :

Melchior, H. ; Strutt, M.J.O.

Volume :

Issue :

fYear :

1964

fDate :

4/1/1964 12:00:00 AM

Firstpage :

439

Lastpage :

440

Keywords :

Avalanche breakdown; Breakdown voltage; Capacitance; Diodes; Doping; Electric breakdown; Pulse circuits; Pulse modulation; Space charge; Temperature;

fLanguage :

English

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1964.2971

Filename :

1444901

Link To Document :