Title :
In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors
Author :
Liu, D. ; Hudait, M. ; Lin, Y. ; Kim, H. ; Ringel, S.A. ; Lu, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., OH, USA
fDate :
3/2/2006 12:00:00 AM
Abstract :
An In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistor (HEMT) structure was grown by molecular beam epitaxy. Room-temperature Hall measurement showed that the device wafer had an electron mobility of 7300 cm2/V s and a sheet electron density of 3×1012 cm-2. The fabricated HEMT devices with a gate length of 0.25 μm exhibited excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, a cutoff frequency (fT) of 115 GHz, and a maximum frequency of oscillation of 137 GHz. This is believed to be the first report of InGaAs/InAsP composite channel HEMTs. The fT is the highest ever reported for any composite channel HEMTs with the same gate length.
Keywords :
Hall effect devices; III-V semiconductors; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 0.25 micron; 115 GHz; 137 GHz; DC performance; HEMT devices; In0.53Ga0.47As-InAs0.3P0.7; high electron mobility transistors; microwave performance; molecular beam epitaxy; peak extrinsic transconductance; room-temperature Hall measurement; sheet electron density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063553
