DocumentCode :
861665
Title :
Wideband CMOS Compatible Capacitive MEMS Switch for RF Applications
Author :
Zhang, Shumin ; Su, Wansheng ; Zaghloul, Mona ; Thibeault, Brian
Author_Institution :
Hughes Network Syst., LLC, Germantown, MD
Volume :
18
Issue :
9
fYear :
2008
Firstpage :
599
Lastpage :
601
Abstract :
This letter presents the design, fabrication, and characterization of a novel capacitive radio frequency (RF) microelectromechanical system (MEMS) switch. The switch uses thermal actuation and a finger structure for capacitive coupling. The switch is CMOS process-compatible and uses a two step maskless reactive ion etching (RIE) micromachining technique for post-processing. The measurement results show that the insertion loss is 1.6 dB and isolation is 33 dB at 5.4 GHz. The applications of this switch are ISM/WLAN CMOS front-end reconfigurable RF circuits such as voltage controlled oscillators, filters, and matching networks.
Keywords :
CMOS integrated circuits; micromachining; microswitches; radiofrequency integrated circuits; sputter etching; voltage-controlled oscillators; wireless LAN; ISM/WLAN CMOS front-end; capacitive MEMS switch; capacitive coupling; finger structure; frequency 5.4 GHz; maskless reactive ion etching; microelectromechanical system; micromachining; radiofrequency applications; reconfigurable radiofrequency circuits; thermal actuation; voltage controlled oscillators; wideband CMOS compatible; CMOS process; Etching; Fabrication; Fingers; Microelectromechanical systems; Micromechanical devices; Microswitches; Radio frequency; Switches; Wideband; CMOS; Capacitive shunt switch; micorelectromechanical system (MEMS) switch; radio frequency (RF)-MEMS;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2002455
Filename :
4624619
Link To Document :
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