Title :
Effect of Damping Constant on Magnetic Switching in Spin Torque Driven Perpendicular MRAM
Author :
Zhu, Xiaochun ; Zhu, Jian-Gang
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA
fDate :
6/1/2007 12:00:00 AM
Abstract :
In this paper, we present a spin torque included dynamic micromagnetic modeling investigation on the perpendicular magnetoresistive random access memory design. A small inject current always generates a steady magnetization precession of the composite storage layer around perpendicular axis. For a given current density, the precession frequency is lower when the Gilbert damping constant of the perpendicular layer is higher. It is found that magnetization reversal of the perpendicular storage layer occurs when the lateral precession frequency reaches the ferromagnetic resonance condition. To reach the required precession frequency, a higher current density is required for a great value of damping constant of the perpendicular layer
Keywords :
current density; damping; ferromagnetic resonance; magnetic storage; magnetic switching; magnetisation reversal; magnetoresistive devices; micromagnetics; perpendicular magnetic recording; random-access storage; Gilbert damping constant; composite storage layer; current density; dynamic micromagnetic modeling; ferromagnetic resonance; lateral precession frequency; magnetic switching; magnetization reversal; perpendicular magnetoresistive random access memory; spin torque; Current density; Damping; Frequency; Magnetic resonance; Magnetic switching; Magnetization reversal; Magnetoresistance; Micromagnetics; Random access memory; Torque; Damping constant; ferromagnetic resonance; magnetoresistive random access memory (MRAM); perpendicular MRAM; spin torque;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.892330