Title :
A 3–50 GHz Ultra-Wideband PHEMT MMIC Balanced Frequency Doubler
Author :
Liu, Yu ; Yang, Tao ; Yang, Ziqiang ; Chen, Jia
Author_Institution :
Microwave Center, Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
A novel configuration of ultra-wideband (UWB) GaAs PHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. By using two different terminal impedances of the common-source/common-gate active balun, the doubler exhibits UWB characteristic with more than a four octave frequency range. From 3 to 50 GHz, the measured conversion gain and fundamental frequency suppression of the doubler are better than -4 dB and 15 dB.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; baluns; frequency multipliers; gallium arsenide; GaAs; active balun; frequency 3 GHz to 50 GHz; ultra wideband PHEMT MMIC balanced frequency doubler; Frequency measurement; Gain measurement; Gallium arsenide; Impedance matching; Integrated circuit measurements; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Ultra wideband technology; Active balun; balanced doubler; distributed amp-lifier; monolithic microwave integrated circuit (MMIC); ultra-wideband (UWB);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.2002467
