A 3–50 GHz Ultra-Wideband PHEMT MMIC Balanced Frequency Doubler

Author

Liu, Yu ; Yang, Tao ; Yang, Ziqiang ; Chen, Jia

Author_Institution

Microwave Center, Univ. of Electron. Sci. & Technol. of China, Chengdu

Volume

18

Issue

9

fYear

2008

Firstpage

629

Lastpage

631

Abstract

A novel configuration of ultra-wideband (UWB) GaAs PHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. By using two different terminal impedances of the common-source/common-gate active balun, the doubler exhibits UWB characteristic with more than a four octave frequency range. From 3 to 50 GHz, the measured conversion gain and fundamental frequency suppression of the doubler are better than -4 dB and 15 dB.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; baluns; frequency multipliers; gallium arsenide; GaAs; active balun; frequency 3 GHz to 50 GHz; ultra wideband PHEMT MMIC balanced frequency doubler; Frequency measurement; Gain measurement; Gallium arsenide; Impedance matching; Integrated circuit measurements; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Ultra wideband technology; Active balun; balanced doubler; distributed amp-lifier; monolithic microwave integrated circuit (MMIC); ultra-wideband (UWB);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2002467

Filename

4624629