DocumentCode :
861798
Title :
Performance of Organic Thin-Film Transistors Controlled by Electrode and Device Structures
Author :
Yu, Chien-Hsien ; Lei, Tan-Fu ; Liao, Jin-Long ; Yan, Jing-Yi ; Ho, Jia-Chong
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu
Volume :
5
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
198
Lastpage :
201
Abstract :
We have fabricated organic thin-film transistors (OTFTs) of top contact (TC) structures using silver electrode based on triethylsilylethynyl anthradithiophene (TES-ADT) with mobility above 0.41 cm2 s-1 V-1, current modulation higher than 5 times 107 and sub-threshold swing below 0.65 V/dec. The electrical characteristics of OTFTs are not only corresponding to the work function of source and drain electrodes materials but also to the surface tension and deposition energy of them. The effects of work function and surface tension dominate the electrical characteristics in bottom contact (BC) device. On the other hand, TC device is affected by deposition energy dominantly.
Keywords :
electrodes; organic compounds; thin film transistors; OTFT; bottom contact device; current modulation; deposition energy; device structures; drain electrodes materials; organic thin-film transistors; silver electrode; source electrodes materials; surface tension; top contact structures; triethylsilylethynyl anthradithiophene; Contact resistance; Dielectric substrates; Displays; Electric variables; Electrodes; Indium tin oxide; Magnetic materials; Organic thin film transistors; Surface tension; Thin film transistors; Contact resistance; organic compounds; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2009.2016438
Filename :
4918986
Link To Document :
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