DocumentCode
861870
Title
20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Author
Hurm, V. ; Benz, W. ; Berroth, M. ; Bronner, W. ; Kaufel, G. ; Köhler, K. ; Ludwig, M. ; Olander, E. ; Raynor, B. ; Rosenzweig, J.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
32
Issue
7
fYear
1996
fDate
3/28/1996 12:00:00 AM
Firstpage
683
Lastpage
685
Abstract
A 0.85 μm wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 kΩ (into 50 ΩW) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s
Keywords
HEMT integrated circuits; digital communication; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical receivers; photodiodes; wideband amplifiers; 0.85 micron; 13 GHz; 20 Gbit/s; AlGaAs-GaAs; MSM photodiode; OEIC; monolithic integrated optoelectronic receiver; multistage HEMT amplifier; ultrahigh speed optical interconnects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960470
Filename
491900
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