Title :
20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Author :
Hurm, V. ; Benz, W. ; Berroth, M. ; Bronner, W. ; Kaufel, G. ; Köhler, K. ; Ludwig, M. ; Olander, E. ; Raynor, B. ; Rosenzweig, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
3/28/1996 12:00:00 AM
Abstract :
A 0.85 μm wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 kΩ (into 50 ΩW) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s
Keywords :
HEMT integrated circuits; digital communication; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical receivers; photodiodes; wideband amplifiers; 0.85 micron; 13 GHz; 20 Gbit/s; AlGaAs-GaAs; MSM photodiode; OEIC; monolithic integrated optoelectronic receiver; multistage HEMT amplifier; ultrahigh speed optical interconnects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960470
