Title :
Fabrication of high quality, deep-submicron Nb/AlO/sub x//Nb Josephson junctions using chemical mechanical polishing
Author :
Bao, Z. ; Bhushan, M. ; Siyuan Ran ; Lukens, J.E.
Author_Institution :
Dept. of Phys., State Univ. of New York, Stony Brook, NY, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
A reliable process based on Chemical Mechanical Polishing (CMP) has been developed for the fabrication of high quality, deep-submicron Nb/AlO/sub x//Nb Josephson junctions on 2 inch wafers. The Nb counter electrode is defined using low pressure SF/sub 6/ reactive ion etching (RIE) with a mask of SiO, which is thermally evaporated through a bilayer resist stencil patterned by electron beam lithography. After RIE, the entire wafer is coated with SiO, which is then planarized using CMP (which also removes the etch mask) to expose the counter electrode. This technique has produced high quality (V/sub m//spl sime/60 mV for J/sub c/ of 2 kA/cm/sup 2/) junctions with areas as small as 0.003 /spl mu/m/sup 2/ demonstrating that the process does not degrade the junction quality. Junctions with critical currents of 22 /spl mu/A and areas of 0.006 /spl mu/m/sup 2/ have been fabricated from trilayers with J/sub c/>300 kA/cm/sup 2/.<>
Keywords :
Josephson effect; aluminium compounds; critical currents; electron beam lithography; niobium; polishing; sputter deposition; sputter etching; superconducting device testing; superconducting junction devices; 2 in; 22 muA; 60 mV; DC magnetron sputtering; Josephson junction fabrication; Nb counter electrode; Nb-AlO-Nb; SF/sub 6/; SiO; SiO mask; bilayer resist stencil; chemical mechanical polishing; critical currents; deep-submicron Nb/AlO/sub x//Nb Josephson junctions; electron beam lithography; low pressure SF/sub 6/ reactive ion etching; thermal evaporation; trilayers; Chemical processes; Counting circuits; Electrodes; Electron beams; Etching; Fabrication; Josephson junctions; Niobium; Resists; Thermal resistance;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
