Title :
AlSb/InAs HEMTs with high transconductance and negligible kink effect
Author :
Boos, J.B. ; Kruppa ; Park ; Molnar ; Bennett, B.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
3/28/1996 12:00:00 AM
Abstract :
AlSb/InAs HEMTs with a 200 nm gate length have been fabricated and exhibit a low-field source-drain resistance of 0.6 Ωmm, a transconductance as high as 1.3 S/mm, and an effective electron velocity of 3.5×107 cm/s. The HEMTs also have a negligible kink effect
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; ohmic contacts; 1.3 S/mm; 200 nm; AlSb-InAs; AuGe-Ni-Pt-Au; Cr-Au; HEMTs; effective electron velocity; high transconductance; low-field source-drain resistance; negligible kink effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960408
