Title :
High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP
Author :
Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
3/28/1996 12:00:00 AM
Abstract :
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59 GHz, and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm2 self-aligned HBT. A minimum noise figure of 1.4-2.6 dB was measured in the frequency range of 2-18 GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials
Keywords :
III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; semiconductor growth; vapour phase epitaxial growth; 1.4 to 2.6 dB; 2 to 18 GHz; 59 GHz; 68 GHz; C-doped HBT; EHF; GaInP:C-GaAs:C; MOCVD; SHF; TBA; TBP; heterojunction bipolar transistor; low noise device; self-aligned HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960448
