Title :
Non-isothermal quasi-bidimensional energy balance model [HEMT]
Author :
Lepaul, S. ; Aniel, F. ; Peymayeche, L. ; de Lustrac, Andre ; Bouillault, Frederic ; Adde, R.
Author_Institution :
LGEP, CNRS, Gif-sur-Yvette
fDate :
3/28/1996 12:00:00 AM
Abstract :
The self heating effect in ultrashort gate length high electron mobility transistors (HEMTs) is investigated. An original model is presented which accounts for both bidimensional heat transfer and quasi bidimensional energy balance carrier transport
Keywords :
finite element analysis; heat transfer; high electron mobility transistors; semiconductor device models; thermal analysis; FEM; HEMT; bidimensional heat transfer; high electron mobility transistors; nonisothermal model; quasi bidimensional energy balance carrier transport; self heating effect; ultrashort gate length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960418
