Title :
Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level
Author :
Remashan, K. ; Bhat, K.N.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Madras
fDate :
3/28/1996 12:00:00 AM
Abstract :
Silicon nitride is deposited by the direct plasma enhanced chemical vapour deposition (PECVD) technique at a low power on an n-type GaAs sample treated with (NH4)2Sx. Metal-insulator-semiconductor (MIS) structures are fabricated on this sample and annealed at 450°C in nitrogen for 5 min. The 1 MHz capacitance-voltage (C-V) characteristics of these devices demonstrate accumulation, depletion and inversion regions. The interface state density (Dit) estimated from the 1 MHz C-V curve using the high frequency method has shown that the minimum Dit achieved is ~4×1011 cm-2 eV-1
Keywords :
Fermi level; III-V semiconductors; MIS structures; annealing; characteristics measurement; gallium arsenide; interface states; inversion layers; passivation; plasma CVD; silicon compounds; (NH4)2S; 1 MHz; 450 degC; 5 min; Fermi level unpinning; GaAs; MIS structures; PECVD; Si3N4-GaAs; accumulation region; capacitance-voltage characteristics; depletion region; direct plasma enhanced chemical vapour deposition; high frequency method; interface state density; inversion region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960444
