• DocumentCode
    862215
  • Title

    1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors

  • Author

    Nair, M.U. ; Zheng, Y.J. ; Lian, Yong

  • Author_Institution
    Inst. of Microelectron., Singapore
  • Volume
    44
  • Issue
    19
  • fYear
    2008
  • Firstpage
    1127
  • Lastpage
    1129
  • Abstract
    A low-noise amplifier (LNA) for the lower ultra wideband (UWB) communication bandwidth (3.1-4.8 GHz) utilising area and power efficient active inductor implementation is presented. A loss regulated active inductor structure is used to realise shunt peaking inductances, which enable the design to attain a tunable peak S 21 of 14.85 dB with a -3 dB bandwidth of 2.75-4.9 GHz. Implemented in 0.18 mum CMOS technology with a IV supply voltage, the LNA core consumes 7.1 mA while occupying an area of only 0.05 mm2 .
  • Keywords
    CMOS integrated circuits; inductors; low noise amplifiers; ultra wideband communication; CMOS technology; active inductors; frequency 2.75 GHz to 4.9 GHz; low-noise amplifier; size 0.18 micron; ultra wideband communication; voltage 1 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20081980
  • Filename
    4625179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=862215