Title :
1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors
Author :
Nair, M.U. ; Zheng, Y.J. ; Lian, Yong
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
A low-noise amplifier (LNA) for the lower ultra wideband (UWB) communication bandwidth (3.1-4.8 GHz) utilising area and power efficient active inductor implementation is presented. A loss regulated active inductor structure is used to realise shunt peaking inductances, which enable the design to attain a tunable peak S 21 of 14.85 dB with a -3 dB bandwidth of 2.75-4.9 GHz. Implemented in 0.18 mum CMOS technology with a IV supply voltage, the LNA core consumes 7.1 mA while occupying an area of only 0.05 mm2 .
Keywords :
CMOS integrated circuits; inductors; low noise amplifiers; ultra wideband communication; CMOS technology; active inductors; frequency 2.75 GHz to 4.9 GHz; low-noise amplifier; size 0.18 micron; ultra wideband communication; voltage 1 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081980
