Title :
Total Dose Ionizing Radiation Effects in the Indium–Zinc Oxide Thin-Film Transistors
Author :
Yuan Liu ; Wei-Jing Wu ; Yun-fei En ; Lei Wang ; Zhi-Feng Lei ; Xiao-Han Wang
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China
Abstract :
This letter deals with the total dose ionizing radiation effects in the amorphous indium-zinc oxide thin-film transistors (IZO TFTs). After radiation, a negative shift of threshold voltage was observed. The experimental results show electron field effect mobility, subthreshold swing, and low frequency noise were increased after radiation. Furthermore, the influences of bias and gate length on the radiation effect of IZO TFTs are also presented.
Keywords :
indium compounds; radiation hardening (electronics); thin film transistors; zinc compounds; IZO TFT; amorphous indium-zinc oxide thin-film transistors; electron field effect mobility; frequency noise; negative shift; subthreshold swing; threshold voltage; total dose ionizing radiation effects; Electron traps; Insulators; Logic gates; Radiation effects; Thin film transistors; Threshold voltage; Indium–zinc oxide (IZO); ionizing radiation; thin-film transistor; total dose; worst case bias;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2301801
