Title :
Superconducting field effect devices with high transition temperature and critical current density
Author :
Doughty, C. ; Talyansky, V. ; Kwon, C. ; Findikoglu, A.T. ; Xi, X.X. ; Venkatesan, T.
Author_Institution :
Center for Superconductivity Res., Maryland Univ., College Park, MD, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
We have investigated buffer layers of Pr/sub 0.55/Y/sub 0.45/Ba/sub 2/Cu/sub 3/O/sub 7-/spl delta// (PY)BCO for YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO)/SrTiO/sub 3/ field effect devices. The transitions of single unit cell thick YBCO films in (PY)BCO/YBCO/(PY)BCO trilayers depend strongly on the buffer layer thickness, with optimum T/sub c//spl ap/40 K obtained at a buffer layer thickness of 5nm. SuFET devices deposited on such an optimized buffer layer exhibit substantial improvements in channel quality. For a 3.6 nm thick channel, transition temperature >55 K and critical current density /spl sim/10/sup 6/ A/cm/sup 2/ are obtained. The modulations observed in both the normal and superconducting states are consistent with those obtained in earlier work on non-weak-link dominated samples.<>
Keywords :
barium compounds; critical current density (superconductivity); field effect transistors; high-temperature superconductors; superconducting transistors; superconducting transition temperature; yttrium compounds; (PY)BCO/YBCO/(PY)BCO trilayers; Pr/sub 0.55/Y/sub 0.45/Ba/sub 2/Cu/sub 3/O/sub 7-/spl delta//; Pr/sub 0.55/Y/sub 0.45/Ba/sub 2/Cu/sub 3/O/sub 7/; SuFET; YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta///SrTiO/sub 3/; YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/; buffer layers; critical current density; superconducting field effect devices; transition temperature; Buffer layers; Charge carrier density; Critical current density; Dielectric materials; High temperature superconductors; Superconducting devices; Superconducting films; Superconducting materials; Superconducting transition temperature; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on