Electric field effect of SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ multilayers grown by all-MBE

Author

Nakamura, T. ; Tokuda, H. ; Iiyama, M.

Author_Institution

Syst. & Electron. R&D Center, Sumitomo Electr. Ind. Ltd., Osaka, Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

2875

Lastpage

2878

Abstract

Epitaxial SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ (STO/YBCO) multilayers for a superconducting field-effect transistor (SuFET) were fabricated by an ozone assisted Molecular Beam Epitaxy (MBE) method. To eliminate interdiffusion at the interface, we deposited high quality STO films at around 500/spl deg/C on YBCO films with clean surfaces. At this temperature, interdiffusion was negligible through in-situ Auger Electron Spectroscopy (AES). The electric field effect in a Ag/STO/YBCO device configuration also indicated the suppression of the interfacial layer between the STO and YBCO film.<>

Keywords

Auger effect; barium compounds; chemical interdiffusion; field effect transistors; high-temperature superconductors; molecular beam epitaxial growth; strontium compounds; superconducting epitaxial layers; superconducting transistors; yttrium compounds; 500 C; Ag-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/; Ag/STO/YBCO device; Auger electron spectroscopy; STO films; SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ multilayers; YBCO films; all-MBE; electric field; interdiffusion; interfacial layer; ozone assisted molecular beam epitaxy; superconducting field-effect transistor; Electrons; FETs; Molecular beam epitaxial growth; Nonhomogeneous media; Spectroscopy; Superconducting epitaxial layers; Superconducting films; Surface cleaning; Temperature; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403192

Filename

403192