Title :
Transistor performance of high-T/sub c/ three terminal devices based on carrier concentration modulation
Author :
Joosse, K. ; Boguslavskij, Y.M. ; Vargas, L. ; Gerritsma, G.J. ; Rogalla, H.
Author_Institution :
Fac. of Appl. Phys., Twente Univ., Enschede, Netherlands
fDate :
6/1/1995 12:00:00 AM
Abstract :
Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-T/sub c/ materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements.<>
Keywords :
carrier density; field effect transistors; high-temperature superconductors; quasiparticles; superconducting transistors; carrier concentration modulation; electric field effect devices; fabrication; high-T/sub c/ materials; quasiparticle injection effect devices; three terminal devices; transistor; Charge carrier density; Current-voltage characteristics; Dielectrics and electrical insulation; Superconducting devices; Superconducting epitaxial layers; Superconducting materials; Superconductivity; Temperature; Voltage; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
