Three-terminal field effect superconducting device using SrTiO/sub 3/ channel

Author

Yoshida, A. ; Tamura, H. ; Takauchi, H. ; Hato, T. ; Yokoyama, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

2892

Lastpage

2895

Abstract

As a first step toward fabricating transistors to control supercurrent, we fabricated two- and three-terminal devices that have coplanar Nb electrodes coupled with a SrTiO/sub 3/ substrate. In the two-terminal devices, the Nb electrodes were coupled with an Nb-doped SrTiO/sub 3/ substrate with a carrier concentration of 2/spl times/10/sup 19/ cm/sup -3/. Electrode spacing was about 50 nm. The devices showed Josephson effect at 4.2 K. Three-terminal devices were made on a thinly doped surface of a non-doped 0.4-mm-thick SrTiO/sub 3/ substrate with gate electrodes on the non-doped area of the substrate. Resistance of the three-terminal devices was controlled by applying voltages to the gate electrode at 4.2 K.<>

Keywords

Josephson effect; carrier density; field effect transistors; niobium; superconducting transistors; type II superconductors; 4.2 K; Josephson effect; Nb; SrTiO/sub 3/; carrier concentration; coplanar electrodes; electrode spacing; gate electrodes; superconducting transistors; three-terminal field effect superconducting device; Dielectric devices; Electrodes; High temperature superconductors; High-K gate dielectrics; Josephson junctions; Niobium; Substrates; Superconducting devices; Superconducting films; Voltage control;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403196

Filename

403196