Title :
Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector
Author :
Pacebutas, V. ; Biciunas, A. ; Bertulis, K. ; Krotkus, A.
Author_Institution :
Semicond. Phys. Inst., Vilnius
Abstract :
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.
Keywords :
epitaxial layers; gallium compounds; high-speed optical techniques; photoconducting devices; potassium compounds; solid lasers; submillimetre wave spectroscopy; ytterbium; GaBiAs detector; GaBiAs epitaxial layer; GaBiAs:Si; KGd(WO4)2:Yb; Yb:KGW laser; femtosecond laser pulses; narrow-gap semiconductor surface emitter; optoelectronic terahertz radiation system; photoconductive detector; spectral bandwidth; terahertz time-domain spectroscopy system; wavelength 1 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081630
