• DocumentCode
    862385
  • Title

    Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector

  • Author

    Pacebutas, V. ; Biciunas, A. ; Bertulis, K. ; Krotkus, A.

  • Author_Institution
    Semicond. Phys. Inst., Vilnius
  • Volume
    44
  • Issue
    19
  • fYear
    2008
  • Firstpage
    1154
  • Lastpage
    1155
  • Abstract
    A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.
  • Keywords
    epitaxial layers; gallium compounds; high-speed optical techniques; photoconducting devices; potassium compounds; solid lasers; submillimetre wave spectroscopy; ytterbium; GaBiAs detector; GaBiAs epitaxial layer; GaBiAs:Si; KGd(WO4)2:Yb; Yb:KGW laser; femtosecond laser pulses; narrow-gap semiconductor surface emitter; optoelectronic terahertz radiation system; photoconductive detector; spectral bandwidth; terahertz time-domain spectroscopy system; wavelength 1 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20081630
  • Filename
    4625196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=862385