Title :
1/f noise of Sb-based p-channel HFETs
Author :
Kruppa, W. ; Boos, J. Brad ; Bennett, Brian R. ; Papanicolaou, N.A.
Author_Institution :
Naval Res. Lab., Washington, DC
Abstract :
The 1/f noise of antimonide-based p-channel HFETs has been measured for the first time. The devices are fabricated with an InAlSb/AlGaSb barrier and a strained In0.41Ga0.59Sb quantum-well channel, yielding a channel hole mobility of 1020 cm2/V s and a sheet density of 1.6 1012 cm−2. The low-frequency noise spectrum in the linear region has a pure 1/f slope with no generation-recombination component. The Hooge parameter, alphaH, varies between 3times10-4 and 9times10-3 depending on the gate bias.
Keywords :
1/f noise; aluminium compounds; antimony; circuit noise; gallium compounds; high electron mobility transistors; indium compounds; quantum wells; 1/f noise; InAlSb-AlGaSb; channel hole mobility; generation-recombination component; low-frequency noise spectrum; p-channel HFET; quantum-well channel; sheet density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082135
