Title :
High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films
Author :
Chang, Chorng-Ping ; Wu, Y.S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral ( lambda~ 532 nm) crystallisation (CLC) with an output power of 3.8 W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293 cm2/Vs, which was much higher than that of MILC TFTs (54.8 cm2/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability.
Keywords :
crystallisation; laser beam annealing; thin film transistors; MILC-CLC-TFT; amorphous silicon; continuous-wave laser annealing; continuous-wave laser lateral crystallisation; metal-induced lateral crystallisation process; metal-induced lateral crystallised silicon films; poly-Si TFT; polycrystalline silicon; power 3.8 W; thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081620
