Fundamental limitations in RF switching and phase shifting using semiconductor diodes

When semiconductor diodes are used as variable impedance switching elements in RF transmission networks, the maximum power and minimum attenuation depend upon the characteristics of the diodes and the function being performed. Equations and theorems are derived which define these limits for quantized RF control networks used in on-off switches, selection switches, and phase-shift devices. The relationships are quite general and the limits are shown to apply to a wide variety of network configurations. It is shown that the maximum power of a switch is proportional to the maximum RF current of the forward-biased diode and also to the maximum RF voltage when reverse-biased. The maximum power in phase shifters is a sinusoidal function of the phase change required. Minimum attenuation depends upon the switching function performed, the frequency of operation, and a newly defined cutoff frequency which includes diode resistance in both forward-bias and reverse-bias states.