DocumentCode :
862583
Title :
Absorption edge modulator utilizing a P-N junction
Author :
Racette, G.
Volume :
52
Issue :
6
fYear :
1964
fDate :
6/1/1964 12:00:00 AM
Firstpage :
716
Lastpage :
716
Keywords :
Absorption; Etching; Frequency; Gallium arsenide; Optical materials; Optical modulation; P-n junctions; Semiconductor materials; Voltage; Zinc;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3062
Filename :
1444992
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=862583
