Ion implantation effects on GaAs MESFETs

Author

Anholt, Robert ; Sigmon, Thomas W.

Author_Institution

Solid State Electron. Lab., Stanford Univ., CA, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

250

Lastpage

255

Abstract

The effects of ion-implantation on the uniformity and the ultimately achievable performance of GaAs MESFETs are calculated. The results of an extensive study of the profiles of Si, Se, and Be ions implanted into GaAs are incorporated into a combined process and device model for GaAs MESFET technology. Taken into account are the scaling of transconductances with implantation energy, effects of implant profiles and impurities on low-gate-bias transconductances, dopant diffusion during annealing, effects of encapsulant thickness and etch depth on threshold-voltage uniformity, and effects of recoil atoms on threshold voltages for implants through Si₃N₄ and SiO₂ caps

Keywords

III-V semiconductors; Schottky gate field effect transistors; beryllium; gallium arsenide; ion implantation; selenium; silicon; GaAs; GaAs MESFET technology; GaAs:Be; GaAs:Se; GaAs:Si; MESFETs; combined process and device model; dopant diffusion during annealing; doping profiles; effects of encapsulant thickness; effects of implant profiles; effects of recoil atoms; etch depth; implantation energy; implants through Si₃N₄; implants through SiO₂ caps; ion implantation effects; low-gate-bias transconductances; scaling of transconductances; semiconductors; threshold voltages; threshold-voltage uniformity; ultimately achievable performance; Annealing; Etching; FETs; Gallium arsenide; Implants; Ion implantation; MESFETs; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19923

Filename

19923