Title :
Selective TE-TM mode pumping efficiencies for ridge-waveguide lasers in presence of stress
Author :
Maciejko, Roman ; Golebiowski, A. ; Champagne, A. ; Glinski, Jan M.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
Abstract :
In ridge-waveguide InGaAsP lasers, TE-TM polarization switching with injection current can be caused by the presence of stress in the active layer coming from the deposition of stressed oxide and metallic films on the surface. It is shown that polarization switching takes its origin in the change of the mode pumping efficiency as the current varies. This conclusion has been reached with the help of a comprehensive semiconductor laser model that includes stress effects. Various stress regimes have been identified and it is also shown that the overall stress value in the active layer is the dominant effect, not so much the detailed stress profile.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; light polarisation; nonlinear optics; optical pumping; optical switches; semiconductor device models; semiconductor lasers; semiconductor switches; InGaAsP; TE-TM mode pumping efficiencies; TE-TM polarization switching; active layer; injection current; metallic films; mode pumping efficiency; optical waveguides; ridge-waveguide lasers; semiconductor laser model; stress effects; stress regimes; stress value; stressed oxide film deposition; surface deposition; Laser excitation; Laser modes; Laser transitions; Optical device fabrication; Polarization; Pump lasers; Semiconductor films; Tellurium; Thermal stresses; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
