Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence

Author

Colbourne, Paul D. ; Cassidy, Daniel T.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

29

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

62

Lastpage

68

Abstract

Images of stress distributions in GaAs-based diode lasers have been obtained using scanned polarization-resolved photoluminescence. A stress resolution of about 10⁷dyn/cm²and a spatial resolution of about 1 μm have been obtained. The experimental technique is described, and measured stress distributions due to ridge structures, metallization, applied force, and bonding are presented

Keywords

III-V semiconductors; gallium arsenide; laser variables measurement; luminescence of inorganic solids; optical images; optical resolving power; photoluminescence; semiconductor lasers; GaAs diode lasers; applied force; bonding; light polarization; measured stress distributions; metallization; ridge structures; scanned polarization-resolved photoluminescence; spatial resolution; stress distributions; stress imaging; stress resolution; Compressive stress; Diode lasers; Gallium arsenide; Optical polarization; Photoluminescence; Semiconductor lasers; Spatial resolution; Strain measurement; Stress measurement; Tensile stress;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.199245

Filename

199245