Title :
Theory of gain in quantum-wire lasers grown in V-grooves
Author :
Citrin, D.S. ; Chang, Yia-Chung
Author_Institution :
Max-Planck-Inst. fuer Festkorperforschung, Stuttgart, Germany
fDate :
1/1/1993 12:00:00 AM
Abstract :
Theoretical calculations of gain, refractive index change, differential gain, and threshold current for GaAs-AlGaAs quantum-wire lasers grown in V-shaped grooves are presented. The theoretical model is based on the density-matrix formalism with intraband relaxation, and the subband structure is calculated within the effective bond-orbital model. For the quantum-wire geometry treated, agreement with the observed subband spacings is found. Because of the small overlap of the optical field with the active region for a single quantum wire, lasing threshold is reached only when several subbands are filled
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor lasers; semiconductor quantum wires; GaAs-AlGaAs; V-grooves; active region; density-matrix formalism; differential gain; effective bond-orbital model; intraband relaxation; laser gain; lasing threshold; optical field; quantum-wire geometry; quantum-wire lasers; refractive index change; semiconductor growth; subband structure; threshold current; Bonding; Geometrical optics; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical variables control; Quantum mechanics; Refractive index; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of