Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET´s

Author

Chang, Chian-Sern ; Day, Ding-yuan S.

Author_Institution

Avantek Inc., Santa Clara, CA, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

269

Lastpage

280

Abstract

The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. The resulting l-V curves are in excellent agreement with experimental data. The field distribution and the electron concentration and velocity profiles are consistent with the physical behavior of electrons in GaAs MESFETs

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; Chang-Fetterman equation; GaAs; MESFETs; behavior of electrons; current-voltage characteristics; electron concentration profile; electron drift velocity versus electric field; electron velocity profile; field distribution; l-V curves; physical analytic model; physical behavior of electrons; saturation regime; semiconductors; two-dimensional Poisson equation; Current-voltage characteristics; Electron mobility; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; MOSFET circuits; Poisson equations; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19926

Filename

19926