Title :
Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET´s
Author :
Chang, Chian-Sern ; Day, Ding-yuan S.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. The resulting l-V curves are in excellent agreement with experimental data. The field distribution and the electron concentration and velocity profiles are consistent with the physical behavior of electrons in GaAs MESFETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; Chang-Fetterman equation; GaAs; MESFETs; behavior of electrons; current-voltage characteristics; electron concentration profile; electron drift velocity versus electric field; electron velocity profile; field distribution; l-V curves; physical analytic model; physical behavior of electrons; saturation regime; semiconductors; two-dimensional Poisson equation; Current-voltage characteristics; Electron mobility; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; MOSFET circuits; Poisson equations; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
