Electrical field effect in highly resistive NbN microbridge

Author

Yoshikawa, N. ; Miura, N. ; Xiao Chen ; Yokoyama, K. ; Sugahara, M.

Author_Institution

Fac. of Eng., Yokohama Nat. Univ., Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

3090

Lastpage

3093

Abstract

We investigate conduction properties and electrical field effect of highly resistive NbN microbridges. The bridge region consists of NbN thin films which have granular structure with /spl sim/10 nm. The dimension of the microbridge is approximately /spl sim/200 nm in length and /spl sim/50 nm in width. The highly resistive (100 k/spl Omega/) microbridges exhibit nonlinear current-voltage (I-V) characteristics at low temperatures which are similar to those of an array of single electron tunneling (SET) junctions. The offset voltage ranges from 2 mV to 300 mV at 4.2 K depending on the bridge resistance and the bridge width. Periodic modulation of bridge conductance is observed when external gate electric field is applied to the bridges. These results coincide fairly well with the simulation based on the SET array model.<>

Keywords

niobium compounds; superconducting microbridges; superconducting thin films; superconductive tunnelling; 100 kohm; NbN; NbN thin films; bridge conductance; bridge resistance; electrical field; granular structure; microbridge; nonlinear current-voltage characteristics; offset voltage; single electron tunneling junction array; Bridge circuits; Bridges; Electrons; Grain size; Solitons; Sputtering; Substrates; Temperature; Tunneling; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403245

Filename

403245