Title :
Electron emission from direct bandgap heterojunction capacitors
Author :
Kleine, John S. ; Qian, Qi-de ; Cooper, James A., Jr. ; Melloch, Michael R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped AlxGa1-xAs (x=0.38) is measured using a transient capacitance technique at temperatures from 49.8 to 84.4 K and at various gate biases. A model based on physical mechanisms is developed that accurately describes the inversion charge leakage. The model parameters are adjusted within their limits of uncertainty to obtain the optimal fit of present theory to experiment. The fit results in estimation of δEc=0.28 eV and tunneling effective mass m*=0.08 mO, for Al0.38 Ga0.62As. The model is used to predict the storage characteristics of similar devices with lower GaAs doping and with an alternate barrier material
Keywords :
III-V semiconductors; capacitors; electron emission; gallium arsenide; semiconductor junctions; 49.8 to 84.4 K; GaAs-Al0.38Ga0.62As; direct bandgap heterojunction capacitors; electron emission; gate biases; inversion charge leakage; inversion layer; model; optimal fit of present theory; p-type GaAs; physical mechanisms; semiconductors; storage characteristics; temperatures; transient capacitance technique; Capacitance measurement; Capacitors; Effective mass; Electron emission; Gallium arsenide; Heterojunctions; Material storage; Photonic band gap; Temperature; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
