DocumentCode :
863087
Title :
Double-barrier resonant tunneling transport model
Author :
Hu, Yuming ; Stapleton, Shawn P.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Volume :
29
Issue :
2
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
327
Lastpage :
339
Abstract :
A semiquantum transport model for electron transport in the resonant tunneling diode (RTD) is presented. The total electrons tunneling through the RTD are partitioned into two parts. The first is the coherent tunneling electrons, which do not experience any scattering except by the barriers during tunneling. These electrons are described by the damped resonant tunneling model. The second is the incoherent tunneling electrons, which are the electrons scattered in the quantum well by the phonons, impurities, etc. The hot electron distribution, which is characterized by the effective Fermi energy μe and electron temperature Te, is proposed to model the nonequilibrium distribution of the incoherent electrons in the well. The parameters μe and Te can be uniquely determined by applying the energy conservation law and the particle conservation law to the incoherent electrons in the well. The incoherent electrons play a major role in the operation of the RTD. The capacitance of the RTD is investigated, based on the model and Poisson´s equation. Extensive numerical results are presented
Keywords :
Fermi level; hot carriers; resonant tunnelling devices; semiconductor device models; tunnel diodes; Poisson´s equation; capacitance; coherent tunneling electrons; damped resonant tunneling model; double barrier; effective Fermi energy; electron scattering; electron temperature; electron transport; energy conservation law; hot electron distribution; impurities; incoherent tunneling electrons; nonequilibrium distribution; particle conservation law; phonons; quantum well; resonant tunneling diode; semiquantum transport model; Capacitance; Diodes; Electrons; Energy conservation; Impurities; Particle scattering; Phonons; Poisson equations; Resonant tunneling devices; Temperature distribution;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.199286
Filename :
199286
Link To Document :
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