Title :
A fully integrated 0.18-μm CMOS direct conversion receiver front-end with on-chip LO for UMTS
Author :
Gatta, Francesco ; Manstretta, Danilo ; Rossi, Paolo ; Svelto, Francesco
Author_Institution :
Dept. of Electron., Univ. of Pavia, Italy
Abstract :
This paper presents a 0.18-μm CMOS direct-conversion IC realized for the Universal Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise amplifier, quadrature mixers, variable gain amplifiers, and local oscillator generation circuits. The solution is based on very high dynamic range front-end blocks, a low-power superharmonic injection-locking technique for quadrature generation and continuous-time dc offset removal. Measured performances are an overall gain variable between 21 and 47 dB, 5.6 dB noise figure, -2 dBm out-of-band IIP3, -10 dBm in-band IIP3, 44.8-dBm minimum IIP2, and -155-dBc/Hz phase noise at 135 MHz from carrier frequency, while drawing 21 mA from a 1.8-V supply.
Keywords :
3G mobile communication; CMOS integrated circuits; VHF amplifiers; VHF oscillators; frequency convertors; radio receivers; radiofrequency integrated circuits; 0.18 mm; 1.8 V; 135 MHz; 21 mA; 21 to 47 dB; 5.6 dB; CMOS process; UMTS; Universal Mobile Telecommunication System; carrier frequency; continuous-time DC offset removal; direct-conversion IC; dynamic range front-end blocks; fully integrated direct conversion receiver front-end; in-band IIP3; local oscillator generation circuits; low-power superharmonic injection-locking technique; minimum IIP2; on-chip LO; out-of-band IIP3; phase noise; quadrature generation; quadrature mixers; variable gain amplifiers; variable gain low-noise amplifier; 3G mobile communication; CMOS integrated circuits; DC generators; Dynamic range; Frequency measurement; Gain measurement; Local oscillators; Low-noise amplifiers; Noise measurement; Phase measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.820865
