Title :
Avalanche Photodiodes with Enhanced Ionization Rates Ratio: Towards a Solid State Photomultiplier
Author_Institution :
Bell Laboratories Murray Hill, New Jersey 07974
Abstract :
Recent results on a new class of low excess noise avalanche photodiodes (APDs) are discussed. A significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs. In addition two novel APDs where only electrons ionize (channeling and staircase APDs) have been disclosed. The staircase APD has lower bias voltage (5-10V) than conventional APDs and virtually noise free multiplication similarly to a phototube.
Keywords :
Avalanche photodiodes; Charge carrier processes; Electrons; Gallium arsenide; Ionization; Photomultipliers; Photonic band gap; Solid state circuits; Superlattices; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332303
