Title :
A (Ga,Al) as Semiconductor Scintillator with Monolithically Integrated Photodiode: A New Detector
Author :
Rühle, W.W. ; Glasow, P.A. ; Schwarzmichel, K.D.
Author_Institution :
Siemens AG Central Research Laboratories, D-8520 Erlangen, F.R.Germany
Abstract :
A new type of a particle detector with a (Ga, Al) As-GaAs heterojunction is demonstrated. A liquid phase epitaxial (Ga, Al) As layer of up to 150 ¿m thickness with graded band gap acts as scintillator and the junction as photodiode with GaAs as absorbing layer. The device can be operated without bias. Particle spectra are presented and the position dependent net e,h pair creation energy is discussed.
Keywords :
Absorption; Buffer layers; Gallium arsenide; Heterojunctions; Infrared detectors; Luminescence; Photodiodes; Photonic band gap; Radiation detectors; Semiconductor diodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332306
