DocumentCode :
863493
Title :
A 1.25-V micropower Gm-C filter based on FGMOS transistors operating in weak inversion
Author :
Rodriguez-Villegas, Esther ; Yúfera, Alberto ; Rueda, Adoracion
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., London, UK
Volume :
39
Issue :
1
fYear :
2004
Firstpage :
100
Lastpage :
111
Abstract :
This paper presents a novel linearized transconductor architecture working at 1.25 V in a 0.8-μm CMOS technology with very low power consumption. The special features of the floating-gate MOS (FGMOS) transistor are combined in weak and strong inversion leading to a simplified topology with fewer stacked transistors and a very low noise floor. The design methodology is thoroughly explained, together with the advantages and disadvantages of working with the FGMOS transistor. Furthermore, second-order effects arising from nonideal behavior of the device are analyzed and limits for the performance are established. Experimental results from a second-order low-pass/bandpass filter that was implemented using the transconductor show a tunability of over one and a half decades in the audio range, a dynamic range of over 62 dB, and a maximum power consumption of 2.5 μW. These results demonstrate the suitability of the FGMOS transistor for implementing analog continuous-time filters, while at the same time pushing down the voltage limits of process technologies and simplifying the circuit topologies to obtain significant power savings.
Keywords :
CMOS analogue integrated circuits; MOSFET; band-pass filters; circuit tuning; continuous time filters; integrated circuit design; low-pass filters; low-power electronics; 0.8 micron; 1.25 V; 1.25-V micropower Gm-C filter; 2.5 muW; CMOS technology; FGMOS transistors; analog continuous-time filters; audio range; circuit topologies; dynamic range; floating-gate MOS transistor; linearized transconductor architecture; low power consumption; noise floor; power savings; second-order low-pass/bandpass filter; stacked transistors; voltage limits; weak inversion; Band pass filters; CMOS technology; Design methodology; Dynamic range; Energy consumption; MOSFETs; Performance analysis; Topology; Transconductors; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2003.820848
Filename :
1261292
Link To Document :
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