Title :
1.25-Gb/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applications
Author :
Park, Sung Min ; Yoo, Hoi-Jun
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, South Korea
Abstract :
A transimpedance amplifier (TIA) has been realized in a 0.6-μm digital CMOS technology for Gigabit Ethernet applications. The amplifier exploits the regulated cascode (RGC) configuration as the input stage, thus achieving as large effective input transconductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. Test chips were electrically measured on a FR-4 PC board, demonstrating transimpedance gain of 58 dBΩ and -3-dB bandwidth of 950 MHz for 0.5-pF photodiode capacitance. Even with 1-pF photodiode capacitance, the measured bandwidth exhibits only 90-MHz difference, confirming the mechanism of the RGC configuration. In addition, the noise measurements show average noise current spectral density of 6.3 pA/√(Hz) and sensitivity of -20-dBm for a bit-error rate of 10-12. The chip core dissipates 85 mW from a single 5-V supply.
Keywords :
CMOS digital integrated circuits; local area networks; optical receivers; preamplifiers; 0.5 pF; 0.6 micron; 1 pF; 1.25 Gbit/s; 5 V; 58 dB; 85 mW; 950 MHz; FR-4 PC board; GaAs MESFET; Gigabit Ethernet applications; RGC configuration; Si Bipolar; bandwidth determination; bit-error rate; chip core power dissipation; common-gate TIA; digital CMOS technology; input parasitic capacitance; input transconductance; noise current spectral density; noise measurements; optical receiver; photodiode capacitance; regulated cascode CMOS transimpedance amplifier; regulated cascode configuration; transimpedance gain; Bandwidth; CMOS technology; Capacitance measurement; Ethernet networks; Gallium arsenide; Isolation technology; Parasitic capacitance; Photodiodes; Semiconductor device measurement; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.820884
