Three-terminal operation analysis of exciton absorption reflection switches (EARS´s)

Author

Amano, Chikara ; Matsuo, Shinji ; Nakahara, Tatsushi ; Kurokawa, Takashi

Author_Institution

NTT Opto-Electron. Labs., Atsugi, Japan

Volume

29

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

775

Lastpage

784

Abstract

The three-terminal operation of photonic-switching arrays consisting of multiple-quantum-well (MQW) modulators and heterojunction phototransistors (HPTs) connected with distributed Bragg reflectors (DBRs) is analyzed. NOR and OR gate characteristics are achieved by modifying the electrical connection between the MQW modulators and HPTs. A memory function is obtained by controlling DBR transmission. By using an optimum load resistor for the HPTs, switch-on and switch-off times are balanced, and minimum switching energy is obtained. Reduction of residual carrier concentrations in the collector layer of the HPTs and operating voltage of the MQW modulators give a switching energy as low as 1 fJ/μm²

Keywords

electro-optical devices; excitons; optical logic; optical modulation; optical switches; phototransistors; semiconductor quantum wells; DBR transmission; EARS; MQW modulators; NOR gate characteristics; OR gate characteristics; collector layer; distributed Bragg reflectors; electrical connection; exciton absorption reflection switches; heterojunction phototransistors; memory function; minimum switching energy; operating voltage; optimum load resistor; photonic-switching arrays; residual carrier concentrations; switch on times; switch-off times; three-terminal operation; Absorption; Distributed Bragg reflectors; Excitons; Heterojunctions; Optical modulation; Phototransistors; Quantum well devices; Reflection; Resistors; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.199329

Filename

199329