Title :
Comment on "Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model" [with reply]
Author :
Bhatia, Manju ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India
fDate :
3/1/1993 12:00:00 AM
Abstract :
For the original article see ibid., vol.35, no.3, p.325-8 (1988). The commenters solve a two-dimensional Poisson equation by considering the same boundary conditions as given in the above-titled paper by K.K.L. Hsueh et al. They find that the results are entirely different than those obtained in that paper and correspond closely to simulation and experimental data. Hsueh et al. reply that equations (12)-(17) contained a misprint and confirm the correctness of their work.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; boundary conditions; inverse narrow width effects; small-geometry MOSFET; threshold voltage model; two-dimensional Poisson equation; Boundary conditions; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
