DocumentCode :
863587
Title :
Threshold Voltage Modulation Using
Implantation Into Substrate for Ni Fully Silicided Gate/High-
 implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-<i>k</i> gate dielectric. We have clarified the idea that a small part of the implanted nitrogen was activated and acted as a counter dope for a channel by secondary ion mass spectrometry analysis, spreading resistance analysis, and inverse modeling analysis of MOS capacitance-voltage characteristics. It was found that N<sub>2</sub> <sup>+</sup> implantation had an advantage over N<sup>+</sup> implantation for forming a shallow counter-dope layer because the nitrogen-nitrogen pair has large diffusion coefficient, which resulted in a steep profile of nitrogen in a substrate.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOS integrated circuits; elemental semiconductors; high-k dielectric thin films; ion implantation; nitrogen; secondary ion mass spectra; silicon; high-k gate dielectric; inverse modeling analysis; nickel fully silicided gate electrode; nitrogen molecule ion implantation; secondary ion mass spectrometry analysis; silicided gate/high-k NMOS; silicon substrate; spreading resistance analysis; threshold voltage modulation; Ion implantation; MOS devices; nitrogen; silicon;</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2008.2004416</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4625957</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=863587' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=863587</a></div>
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