• DocumentCode
    863610
  • Title

    An analytical quasi-saturation model for vertical DMOS power transistors

  • Author

    Lou, K.H. ; Liu, C.M. ; Kuo, J.B.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    40
  • Issue
    3
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    676
  • Lastpage
    679
  • Abstract
    Current analytical models for vertical DMOS power transistors do not provide accurate explanation of quasi-saturation phenomenon. An analytical quasi-saturation model for vertical DMOS power transistors considering a nonuniform electron distribution in the n-epi region is described. As verified by the PISCES results, the quasi-saturation model provides a much better explanation of DMOS quasi-saturation behaviour than the previous model
  • Keywords
    insulated gate field effect transistors; power transistors; semiconductor device models; PISCES results; n-epi region; nonuniform electron distribution; quasi-saturation model; vertical DMOS power transistors; Analytical models; Councils; Doping; Electrons; Power transistors; Scattering; Semiconductor process modeling; Switches; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.199343
  • Filename
    199343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=863610