Title :
Modeling of the transient response of substrate traps to the substrate voltage in GaAs FETs
Author :
Sengouga, Nouredine ; Jones, Brian K.
Author_Institution :
Sch. of Phys. & Math., Lancaster Univ., UK
fDate :
3/1/1993 12:00:00 AM
Abstract :
The transient response of hole traps, related to the substrate in GaAs FETs, following an electric pulse applied to the substrate (or back gate) is accurately modeled. The modeled transient is found to be nonexponential. Excellent agreement between the experimental data and the model is obtained. The trap filling time required for the substrate hole traps is very sensitive to the difference between the Fermi energy and the trap energy
Keywords :
Fermi level; III-V semiconductors; field effect transistors; gallium arsenide; hole traps; semiconductor device models; transient response; FETs; Fermi energy; GaAs; electric pulse; experimental data; hole traps; model; semiconductors; substrate traps; substrate voltage; transient response; trap energy; trap filling time; Electric resistance; FETs; Filling; Gallium arsenide; Integrated circuit noise; Low-frequency noise; Optical noise; Physics; Transient response; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
