Title :
Numerical analysis of kink effect in HJFET with a heterobuffer layer
Author :
Kunihiro, Kazuaki ; Yano, Hitoshi ; Goto, Norio ; Ohno, Yasuo
Author_Institution :
NEC Corp., Ibaraki, Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
The kink effect in an AlGaAs/GaAs HJFET with a heterobuffer layer is investigated using a two-dimensional device simulator with impact ionization and deep-trap models. It is confirmed that the accumulation of holes generated by impact ionization causes the kink effect. The influence of deep levels on the kink characteristics is also investigated. The kink effect is suppressed by electron traps in the channel region through the recombination of the generated holes. On the other hand, the kink effect is enhanced by hole traps, which are positively ionized by increases in hole concentration. However, excessive hole trap concentration suppresses the accumulation of holes, due to enhanced recombination with electrons. Under such conditions the kink effect vanishes
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; hole traps; junction gate field effect transistors; semiconductor device models; AlGaAs-GaAs; HJFET; accumulation of holes; deep levels; deep-trap models; electron traps; heterobuffer layer; hole traps; impact ionization; kink characteristics; kink effect; semiconductors; submicron JFET; two-dimensional device simulator; Charge carrier processes; Electron traps; Gallium arsenide; Impact ionization; Insulation; Numerical analysis; Numerical simulation; Poisson equations; Spontaneous emission; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
