Title :
Dependence of ionization current on gate bias in GaAs MESFETs
Author :
Canali, Claudio ; Neviani, Andrea ; Tedesco, Carlo ; Zanoni, Enrico ; Centronio, A. ; Lanzieri, Claudio
Author_Institution :
Fac. di Ingegneria, Modena Univ., Italy
fDate :
3/1/1993 12:00:00 AM
Abstract :
The nonmonotonic behavior of gate current Ig as a function of gate-to-source voltage Vgs is reported for depletion-mode double-implant GaAs MESFETs. Experiments and numerical simulations show that the main contribution to Ig (in the range of drain biases studied) comes from impact-ionization-generated holes collected at the gate electrode, and that the bell shape of the Ig(Vgs) curve is strongly related to the drop of the electric field in the channel of the device as Vgs is moved towards positive values
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hot carriers; semiconductor device models; MESFETs; bell shape; depletion-mode; double-implant; gate current; gate-to-source voltage; hot electrons; impact-ionization-generated holes; ionization current dependence; nonmonotonic behavior; numerical simulations; semiconductors; Breakdown voltage; Current measurement; Diodes; Electrodes; Gallium arsenide; Impact ionization; Implants; Irrigation; MESFETs; Numerical simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
